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See detailTechnology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric,
Heidelberger, G.; Roeckerath, M.; Steins, R. et al

in Proc. 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06 (2006)

Starting out from our well established process for AlGaN/GaN HFETs we discuss ways to enrich the process in order to fabricate Metal-Oxide-Semiconductor HFETs (MOSHFETs) with a Gadolinium Scandate (GdScO3 ... [more ▼]

Starting out from our well established process for AlGaN/GaN HFETs we discuss ways to enrich the process in order to fabricate Metal-Oxide-Semiconductor HFETs (MOSHFETs) with a Gadolinium Scandate (GdScO3) insulation layer. In particular, adequate processing orders, various etching procedures and possible drawbacks of the GdScO3 deposition process on ohmic contacts are discussed. Making use of the gained knowledge we fabricated GdScO3-MOSHFETs for the first time. Compared to a conventional HFET the new device shows a higher saturation drain current and a lower gate leakage current. Nevertheless, the potential insulating properties of GdScO3 are not fully exploited yet and further optimization of the deposition process is needed. [less ▲]

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