Growth and properties of GaN and AlN layers on silver substrates

in Applied Physics Letters (2005), 87

We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with ... [more ▼]

We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN 11-22 orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of 0002 . Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current 10−3 A/cm2 . These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. [less ▲]