References of "Mousel, Marina"
     in
Bookmark and Share    
Full Text
Peer Reviewed
See detailOptical properties of Cu2ZnSnSe4 thin films and identification of secondary phases by spectroscopic ellipsometry
Demircioglu, Ozden; Salas, Jose Fabio Lopez; Rey, Germain UL et al

in OPTICS EXPRESS (2017), 25(5), 5327-5340

We apply spectroscopic ellipsometry (SE) to identify secondary phases in Cu2ZnSnSe4 (CZTSe) absorbers and to investigate the optical properties of CZTSe. A detailed optical model is used to extract the ... [more ▼]

We apply spectroscopic ellipsometry (SE) to identify secondary phases in Cu2ZnSnSe4 (CZTSe) absorbers and to investigate the optical properties of CZTSe. A detailed optical model is used to extract the optical parameters, such as refractive index and extinction coefficient in order to extrapolate the band gap values of CZTSe samples, and to obtain information about the presence of secondary phases at the front and back sides of the samples. We show that SE can be used as a non-destructive method for detection of the secondary phases ZnSe and MoSe2 and to extrapolate the band gap values of CZTSe phase. (C) 2017 Optical Society of America [less ▲]

Detailed reference viewed: 130 (1 UL)
Full Text
Peer Reviewed
See detailFormation of nanometer-sized Cu-Sn-Se particles in Cu2ZnSnSe4 thin-films and their effect on solar cell efficiency
Schwarz, Torsten; Cojocaru-Miredin, Oana; Mousel, Marina et al

in ACTA MATERIALIA (2017), 132

Atom probe tomography and transmission electron microscopy are used to study the formation of nano sized Cu-Sn-Se particles in Cu2ZnSnSe4 thin -films. For a Cu -rich precursor, which was deposited at 320 ... [more ▼]

Atom probe tomography and transmission electron microscopy are used to study the formation of nano sized Cu-Sn-Se particles in Cu2ZnSnSe4 thin -films. For a Cu -rich precursor, which was deposited at 320 degrees C under Cu- and Zn-rich growth conditions, Cu2-xSe grains at the surface are detected. During annealing the precursor at 500 degrees C in a SnSe + Se atmosphere most of the Cu2-xSe is transformed to Cu2ZnSnSe4 via the consumption of excessive ZnSe and incorporation of Sn. However, atom probe tomography studies also reveal the formation of various nanometer-sized Cu-Sn-Se particles close to the CdS/Cu(2)ZnSnSe4 interface. One of those particles has a composition close to the Cu2SnSe3 compound. This phase has a smaller band gap than Cu2ZnSnSe4 and is proposed to lead to a significant drop in the open -circuit voltage and could be the main cause for a detrimental p-n junction and the zero efficiency of the final device. Possible effects of the other phases on solar cell performance and formation mechanisms are discussed as well. (C)2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. [less ▲]

Detailed reference viewed: 124 (0 UL)
Full Text
Peer Reviewed
See detailMultiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence (vol 116, 073509, 2014)
Djemour, Rabie; Redinger, Alex UL; Mousel, Marina et al

in JOURNAL OF APPLIED PHYSICS (2015), 118(8),

Detailed reference viewed: 60 (1 UL)
Full Text
Peer Reviewed
See detailCu-Rich Precursors Improve Kesterite Solar Cells
Mousel, Marina; Schwarz, Torsten; Djemour, Rabie et al

in ADVANCED ENERGY MATERIALS (2014), 4(2),

Detailed reference viewed: 118 (0 UL)
Full Text
Peer Reviewed
See detailCu2ZnSnSe4 thin film solar cells produced via co-evaporation and annealing including a SnSe2 capping layer
Redinger, Alex UL; Mousel, Marina; Djemour, Rabie et al

in PROGRESS IN PHOTOVOLTAICS (2014), 22(1), 51-57

Cu2ZnSnSe4 (CZTSe) thin film solar cells have been produced via co-evaporation followed by a high-temperature annealing. In order to reduce the decomposition of the CZTSe, a SnSe2 capping layer has been ... [more ▼]

Cu2ZnSnSe4 (CZTSe) thin film solar cells have been produced via co-evaporation followed by a high-temperature annealing. In order to reduce the decomposition of the CZTSe, a SnSe2 capping layer has been evaporated onto the absorber prior to the high-temperature treatment. This eliminates the Sn losses due to SnSe evaporation. A solar cell efficiency of 5.1 could be achieved with this method. Moreover, the device does not suffer from high series resistance, and the dominant recombination pathway is situated in the absorber bulk. Finally different illumination conditions (white light, red light, and yellow light) reveal a strong loss in fill factor if no carriers are generated in the CdS buffer layer. This effect, known as red-kink effect, has also been observed in the closely related Cu(In,Ga)Se-2 thin film solar cells. Copyright (c) 2013 John Wiley Sons, Ltd. [less ▲]

Detailed reference viewed: 103 (0 UL)