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See detailOptical properties of Cu2ZnSnSe4 thin films and identification of secondary phases by spectroscopic ellipsometry
Demircioglu, Ozden; Salas, Jose Fabio Lopez; Rey, Germain UL et al

in OPTICS EXPRESS (2017), 25(5), 5327-5340

We apply spectroscopic ellipsometry (SE) to identify secondary phases in Cu2ZnSnSe4 (CZTSe) absorbers and to investigate the optical properties of CZTSe. A detailed optical model is used to extract the ... [more ▼]

We apply spectroscopic ellipsometry (SE) to identify secondary phases in Cu2ZnSnSe4 (CZTSe) absorbers and to investigate the optical properties of CZTSe. A detailed optical model is used to extract the optical parameters, such as refractive index and extinction coefficient in order to extrapolate the band gap values of CZTSe samples, and to obtain information about the presence of secondary phases at the front and back sides of the samples. We show that SE can be used as a non-destructive method for detection of the secondary phases ZnSe and MoSe2 and to extrapolate the band gap values of CZTSe phase. (C) 2017 Optical Society of America [less ▲]

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See detailMultiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence (vol 116, 073509, 2014)
Djemour, Rabie; Redinger, Alex UL; Mousel, Marina et al

in JOURNAL OF APPLIED PHYSICS (2015), 118(8),

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See detailCu2ZnSnSe4 thin film solar cells produced via co-evaporation and annealing including a SnSe2 capping layer
Redinger, Alex UL; Mousel, Marina; Djemour, Rabie et al

in PROGRESS IN PHOTOVOLTAICS (2014), 22(1), 51-57

Cu2ZnSnSe4 (CZTSe) thin film solar cells have been produced via co-evaporation followed by a high-temperature annealing. In order to reduce the decomposition of the CZTSe, a SnSe2 capping layer has been ... [more ▼]

Cu2ZnSnSe4 (CZTSe) thin film solar cells have been produced via co-evaporation followed by a high-temperature annealing. In order to reduce the decomposition of the CZTSe, a SnSe2 capping layer has been evaporated onto the absorber prior to the high-temperature treatment. This eliminates the Sn losses due to SnSe evaporation. A solar cell efficiency of 5.1 could be achieved with this method. Moreover, the device does not suffer from high series resistance, and the dominant recombination pathway is situated in the absorber bulk. Finally different illumination conditions (white light, red light, and yellow light) reveal a strong loss in fill factor if no carriers are generated in the CdS buffer layer. This effect, known as red-kink effect, has also been observed in the closely related Cu(In,Ga)Se-2 thin film solar cells. Copyright (c) 2013 John Wiley Sons, Ltd. [less ▲]

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