Reference : Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design
Scientific congresses, symposiums and conference proceedings : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/6524
Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design
English
Fox, Alfred []
Mikulics, Martin [> >]
Strang, B. [> >]
Marso, Michel mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
Grützmacher, Detlev [> >]
Kordos, Peter [> >]
2010
The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
159 - 162
No
International
978-1-4244-8572-7
ASDAM 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems
25 – 27 October 2010
Smolenice
Slovakia
Researchers ; Professionals ; Students
http://hdl.handle.net/10993/6524

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