Reference : Electrical and structural characterization of AlGaN/GaN field-effect transistors with...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/5817
Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
English
Mikulics, Martin [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich, Germany]
Fox, Alfred [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich, Germany]
Marso, Michel mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
Grützmacher, Detlev [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich, Germany]
Donoval, Daniel [Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia]
Kordos, Peter [Department of Microelectronics, Slovak University of Technology, Bratislava, Slovakia]
2012
Vacuum
Elsevier
86
6
754 - 756
Yes
0042-207X
[en] Gallium nitride ; Plasma assisted etching ; Electrical properties ; Photoluminescence ; Transistor
[en] Performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gate was investigated and compared with non-recessed counterparts. Optimal dry etch conditions by plasma assisted Ar sputtering were found for ~6 nm gate recess of a 20 nm thick AlGaN barrier layer. A decrease of the residual strain after the gate recessing (from -0.9 GPa to -0.68 GPa) was evaluated from the photoluminescence measurement. The saturation drain current at the gate voltage VG = 1 V decreased from 1.05 A/mm to 0.85 A/mm after the recessing. The gate voltage for a maximal transconductance (240-250 mS/mm) has shifted from -3 V for non-recessed HFETs to -0.2 V for recessed counterparts. Similarly, the threshold voltage increased after the gate recessing. A decrease of the sheet charge density from 1 x 10 13 cm-2 to4 x 10 12 cm-2 at VG = 0 V has been evaluated from the capacitance measurements. The RF measurements yielded a slight increase of the cut-off frequencies after the gate recessing. All these indicate that the gate recessing is a useful tool to optimize the AlGaN/GaN HFET performance for high-frequency applications as well as for the preparation of normally-off devices.
http://hdl.handle.net/10993/5817
10.1016/j.vacuum.2011.07.016

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