Reference : Non-uniform distribution of induced strain in gate-recessed AlGaN/GaN structure evalu...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/5816
Non-uniform distribution of induced strain in gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements
English
Mikulics, Martin [Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 J¨ulich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Hardtdegen, Hilde [Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Gregušová, Dagmar [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia]
Sofer, Zdenĕk [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6,Czech Republic]
Šimek, P. [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6,Czech Republic]
Trellenkamp, Stefan [Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 J¨ulich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Grützmacher, Detlev [Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 J¨ulich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Lüth, Hans [Peter Grünberg Institute (PGI-9), Forschungszentrum Jüllich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Kordoš, Peter [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovakia]
Marso, Michel mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
2012
Semiconductor Science & Technology
IOP Publishing
27
10
105008 - 105008
Yes (verified by ORBilu)
0268-1242
[en] Micro-photoluminescence ; photoluminescence ; GaN ; HFET
[en] Micro-photoluminescence (μ-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that μ-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN layer. Lateral sub-μm resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform.
http://hdl.handle.net/10993/5816
10.1088/0268-1242/27/10/105008
1.723

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