Reference : Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evalua...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/5815
Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
English
Mikulics, Martin [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany]
Hardtdegen, Hilde [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany]
Winden, Andreas [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany]
Fox, Alfred [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany]
Marso, Michel mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
Sofer, Zdenek [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6, Czech Republic]
Lüth, Hans [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany]
Grützmacher, Detlev [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany and Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Germany]
Kordos, Peter [Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia and Department of Microelectronics, Slovak University of Technology, Bratislava, Slovakia]
2012
Physica Status Solidi C. Current Topics in Solid State Physics
Wiley-VCH Verlag
9
3-4
911 - 914
Yes (verified by ORBilu)
1862-6351
1610-1634
[en] Gate recess ; Heterostructure field-effect transistor ; Micro-photoluminescence ; Nitrides ; Residual strain
[en] The residual strain in AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gates and their non-recessed counterparts were investigated by micro photoluminescence measurements (μ-PL). It is found that strain relaxation accounts for the observed sheet carrier density reduction after gate recessing. The usefulness of the method for device processing optimization is demonstrated. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
http://hdl.handle.net/10993/5815
10.1002/pssc.201100408

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