Reference : Formation of Cu3BiS3 thin films via sulfurization of Bi–Cu metal precursors
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Chemistry
http://hdl.handle.net/10993/451
Formation of Cu3BiS3 thin films via sulfurization of Bi–Cu metal precursors
English
Colombara, Diego mailto [University of Bath > Department of Chemistry]
Peter, Laurence M. [University of Bath > Department of Chemistry]
Hutchings, Kyle [Cranfield University]
Rogers, Keith D. [Cranfield University]
Schäfer, Stefan [Enthone GmbH]
Dufton, Jesse T.R. [University of Bath > Department of Chemistry]
Islam, M. Saiful [University of Bath > Department of Chemistry]
Apr-2012
Thin Solid Films
Elsevier Science
520
16
5165–5171
Yes (verified by ORBilu)
International
0040-6090
[en] Wittichenite ; Availability ; Electrodeposition ; Sulfurization ; Rapid thermal annealing ; RTP ; Photoelectrochemistry ; Solar cells
[en] Thin films of Cu3BiS3 have been produced by conversion of stacked and co-electroplated Bi–Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550 °C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics.
EPSRC
Researchers ; Professionals ; Students ; General public
http://hdl.handle.net/10993/451
10.1016/j.tsf.2012.04.003
http://www.sciencedirect.com/science/article/pii/S0040609012004208

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