Reference : Optical control of polarization in ferroelectric heterostructures
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
Optical control of polarization in ferroelectric heterostructures
Tao, Li [Univ Nebraska]
Lipatov, Alexej [Univ Nebraska]
Lu, Haidong [Univ Nebraska]
Lee, Hyungwoo [Univ Wisconsin]
Lee, Jung-Woo [Univ Wisconsin]
Torun, Engin mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Wirtz, Ludger mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Eom, Chang-Beom [Univ Wisconsin]
Iñiguez, Jorge [Luxembourg Institute of Science & Technology - LIST > MRT]
Sinitskii, Alexander [Univ Nebraska]
Gruverman, Alexej [Univ Nebraska]
Nature Communications
Nature Publishing Group
United Kingdom
[en] perovskites ; transition-metal dichalcogenides ; Heterostructure ; optical switching ; excitons
[en] In the ferroelectric devices, polarization control is usually accomplished by application of an electric field. In this paper, we demonstrate optically induced polarization switching in BaTiO3-based ferroelectric heterostructures utilizing a two-dimensional narrow-gap semiconductor MoS2 as a top electrode. This effect is attributed to the redistribution of the photo-generated carriers and screening charges at the MoS2/BaTiO3 interface. Specifically, a two-step process, which involves formation of intra-layer excitons during light absorption followed by their decay into inter-layer excitons, results in the positive charge accumulation at the interface forcing the polarization reversal from the upward to the downward direction. Theoretical modeling of the MoS2 optical absorption spectra with and without the applied electric field provides quantitative support for the proposed mechanism. It is suggested that the discovered effect is of general nature and should be observable in any heterostructure comprising a ferroelectric and a narrow gap semiconductor.
Fonds National de la Recherche - FnR
FnR ; FNR7490149 > Ludger Wirtz > NANOTMD > 20 Electric transport and superconductivity in TransitionMetal Dichalcogenides nanolayers > 01/02/2014 > 31/01/2019 > 2013; INTER/MOBILITY/16/11467860 2D-Ferro; P12/4853155/Kreisel COFERMAT

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