Reference : Enriched residual free bubbles for semiconductor device simulation
Scientific journals : Article
Engineering, computing & technology : Multidisciplinary, general & others
Computational Sciences
http://hdl.handle.net/10993/34895
Enriched residual free bubbles for semiconductor device simulation
English
Simpson, R. N. [School of Engineering, Institute of Mechanics and Advanced Materials, Cardiff University, Cardiff CF24 3AA, United Kingdom]
Bordas, Stéphane mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
Asenov, A. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, United Kingdom]
Brown, A. R. [School of Engineering, Institute of Mechanics and Advanced Materials, Cardiff University, Cardiff CF24 3AA, United Kingdom]
2012
Computational Mechanics
50
1
119-133
Yes (verified by ORBilu)
International
01787675
[en] Finite element ; Residual-free bubble enrichment ; Semiconductor device simulation ; Stabilisation ; Coupled semiconductor ; Current continuity ; Curved interface ; Faster convergence ; Finite Element ; Finite elements ; Residual free bubbles ; Residual-free bubble functions ; Computational methods ; Mechanical engineering ; Stabilization
[en] This article outlines a method for stabilising the current continuity equations which are used for semiconductor device simulation. Residual-free bubble functions (RfBF) are incorporated into a finite element (FE) implementation that are able to prevent oscillations which are seen when using the conventional Bubnov-Galerkin FE implementation. In addition, it is shown that the RfBF are able to provide stabilisation with very distorted meshes and curved interface boundaries. Comparison with the commonly used SUPG scheme is made throughout, showing that in the case of 2D problems the RfBF allow faster convergence of the coupled semiconductor device equations, especially in the case of distorted meshes.
EPSRC grant EP/G069352/1 “Advanced discretisation strategies for ’atomistic’ nano CMOS simulation”.
Researchers ; Professionals ; Students ; General public ; Others
http://hdl.handle.net/10993/34895
10.1007/s00466-011-0658-6

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