Reference : Resistivity scaling in metallic thin films and nanowires due to grain boundary and su...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/33037
Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering
English
Moors, Kristof mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Sorée, B. [Physics Modeling and Simulation (MSP), IMEC, Kapeldreef 75, Leuven, Belgium, University of Antwerp, Physics Department, Groenenborgerlaan 171, Antwerpen, Belgium, KU Leuven, Electrical Engineering (ESAT) Department, Kasteelpark Arenberg 10, Leuven, Belgium]
Magnus, W. [Physics Modeling and Simulation (MSP), IMEC, Kapeldreef 75, Leuven, Belgium, University of Antwerp, Physics Department, Groenenborgerlaan 171, Antwerpen, Belgium]
2017
Microelectronic Engineering
Elsevier B.V.
167
37-41
Yes (verified by ORBilu)
01679317
[en] Electron scattering ; Electron transport ; Fermi's golden rule ; Grain boundaries ; Nanowires ; Resistivity scaling ; Semiclassical Boltzmann equation ; Surface roughness ; Thin films ; Boltzmann equation ; Electron transport properties ; Quantum theory ; Surface scattering ; Boltzmann transport equation ; Fermi's Golden Rule ; Fitting parameters ; Metallic thin films ; Quantum mechanical ; Statistical properties ; Surface roughness scattering
[en] A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. While taking into account the detailed statistical properties of grains, roughness and barrier material as well as the metallic band structure and quantum mechanical aspects of scattering and confinement, the model does not rely on phenomenological fitting parameters.
http://hdl.handle.net/10993/33037
10.1016/j.mee.2016.10.015

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