Reference : Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(...
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Physics and Materials Science
http://hdl.handle.net/10993/30117
Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(In,Ga)Se2
English
Colombara, Diego mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Berner, Ulrich []
Ciccioli, Andrea []
Malaquias, Joao Corujo Branco [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Bertram, Tobias [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Crossay, Alexandre [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Schöneich, Michael []
Meadows, Helen [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Regesch, David [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Delsante, Simona []
Gigli, Guido []
Valle, Nathalie []
Guillot, Jérome []
El Adib, Brahime []
Grysan, Patrick []
Dale, Phillip mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Feb-2017
Scientific Reports
Nature Publishing Group
7
43266
Yes (verified by ORBilu)
2045-2322
London
United Kingdom
[en] Sodium ; Potassium ; Doping ; CIGS ; Chalcopyrite ; CZTS ; Kesterite ; Chalcogenide ; Solar cell ; Photovoltaic ; Thin film ; GGI gradient ; In-Ga interdiffusion ; Contamination
[en] Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of gas phase alkali transport in the kesterite sulfide (Cu2ZnSnS4) system (re)open the way to a novel gas-phase doping strategy. However, the current understanding of gas-phase alkali transport is very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% to 8% by gas-phase sodium incorporation alone, (ii) identifies the most likely routes for gas-phase alkali transport based on mass spectrometric studies, (iii) provides thermochemical computations to rationalize the observations and (iv) critically discusses the subject literature with the aim to better understand the chemical basis of the phenomenon. These results suggest that accidental alkali metal doping occurs all the time, that a controlled vapor pressure of alkali metal could be applied during growth to dope the semiconductor, and that it may have to be accounted for during the currently used solid state doping routes. It is concluded that alkali gas-phase transport occurs through a plurality of routes and cannot be attributed to one single source.
Fonds National de la Recherche - FnR
http://hdl.handle.net/10993/30117
10.1038/srep43266
http://www.nature.com/articles/srep43266
FnR ; FNR8302176 > Diego Colombara > GALDOCHS > Gas-phase alkali doping of chalcogenide semiconductors > 01/06/2015 > 31/05/2017 > 2014

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