Reference : Excitons in boron nitride single layer
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/28500
Excitons in boron nitride single layer
English
Galvani, Thomas mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
Paleari, Fulvio mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Pereira Coutada Miranda, Henrique mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Molina-Sanchez, Alejandro mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Wirtz, Ludger mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Latil, Sylvain mailto [Université Paris-Saclay]
Amara, Hakim mailto [ONERA-CNRS]
Ducastelle, François mailto [ONERA-CNRS]
6-Sep-2016
Physical Review. B : Condensed Matter
American Institute of Physics
94
125303
Yes (verified by ORBilu)
International
0163-1829
1095-3795
New York
NY
[en] Boron nitride single layer belongs to the family of two-dimensional materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining ab initio calculations and a tight-binding Wannier analysis in both real and reciprocal space. Due to the simplicity of the band structure with single valence (π) and conduction (π∗) bands the tight-binding analysis
becomes quasiquantitative with only two adjustable parameters and provides tools for a detailed analysis of the exciton properties. Strong deviations from the usual hydrogenic model are evidenced. The ground-state exciton is not a genuine Frenkel exciton, but a very localized tightly bound one. The other ones are similar to those found in transition-metal dichalcogenides and, although more localized, can be described within a Wannier-Mott scheme.
Researchers ; Professionals ; Students
http://hdl.handle.net/10993/28500
10.1103/PhysRevB.94.125303
http://journals.aps.org/prb/pdf/10.1103/PhysRevB.94.125303
FnR ; FNR3987081 > Ludger Wirtz > TSDSN > Theoretical Spectroscopy of Defects in Semiconductors and Nanomaterials > 01/02/2013 > 31/01/2016 > 2012

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