Reference : Chemical stability of the Cu2SnS3/Mo interface
Scientific congresses, symposiums and conference proceedings : Poster
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/28401
Chemical stability of the Cu2SnS3/Mo interface
English
De Wild, Jessica mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Robert, Erika mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Dale, Phillip mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Jun-2016
No
No
International
IEEE, PVSEC
from 4-6-2016 to 10-6-2016
[en] thin film solar cell
[en] Cu2SnS3 is an earth abundant semiconductor
researched for photovoltaic applications. Due to the small energy
difference in the Sn2+/4+ oxidation states and low free energy of
MoS2, the Cu2SnS3/Mo interface is unstable and Cu2SnS3
decomposes. The interface is stabilized by growing Cu2SnS3 on a
thin MoS2 layer. Photoluminescence occurs only at the back of the
Cu2SnS3 layers when grown on MoS2 and no quantifiable
amounts of Cu and Sn are measured at the MoS2 substrate. The
quenching of emission of Cu2SnS3 grown on Mo is due to binary
sulfides formed in presence of Mo which are not formed when
Cu2SnS3 is grown on MoS2.
Fonds National de la Recherche - FnR
http://hdl.handle.net/10993/28401
FnR ; FNR5898466 > Phillip Dale > EATSS > Earth Abundant Ternary Semiconductor for thin film Solar > 01/03/2014 > 28/02/2017 > 2013

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