Reference : Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving opt...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
Physics and Materials Science
http://hdl.handle.net/10993/28063
Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics
English
Mikulics, Martin [Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany]
Winden, Andreas [3Robert Bosch GmbH, D-72760 Reutlingen, Germany]
Marso, Michel mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
Moonshiram, Anusha mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
Lüth, Hans [Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany]
Grützmacher, Detlev [Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany]
Hardtdegen, Hilde [Peter Grünberg Institute (PGI-9) Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, and Jülich Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich, Germany]
Jul-2016
Applied Physics Letters
American Institute of Physics
109
041103
Yes (verified by ORBilu)
International
0003-6951
1077-3118
Melville
NY
[en] Light emitting diode ; nano-LED ; InGaN
[en] Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nWand 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics.
http://hdl.handle.net/10993/28063
10.1063/1.4960007

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