Reference : Electronic and Vibrational proprieties of graphene on Ir(111) and SiC(100)
Scientific congresses, symposiums and conference proceedings : Poster
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/22530
Electronic and Vibrational proprieties of graphene on Ir(111) and SiC(100)
English
Pereira Coutada Miranda, Henrique mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Molina-Sanchez, Alejandro mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Wirtz, Ludger mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Sep-2015
No
PSI-K - 2015 Conference
6-09-2015 to 10-09-2015
[en] In the last years, graphene has become one of the most studied materials due to its peculiar electronic, optical, thermal, and mechanical properties. It is thus of major importance, for practical applications, to study how the electronic and vibrational proprieties of graphene change when deposited on a substrate.
The non-commensurability of the unit cell of graphene with the substrate leads to the formation of Moiré patterns with accordingly large supercell sizes. Ab-initio calculations using standard plane-wave based codes on these large systems are of high computational cost even for the ground-state calculations. We show the effect that such Moiré patterns have on the band structure by projecting the resulting electronic structure and phonon dispersion onto the unit cell of free-standing graphene with an unfolding scheme. We compare our results with HREELS measurements of the phonon dispersion of graphene on Ir(111).
The accurate knowledge of the interaction graphene-substrate will provide important information for future applications of graphene on electronic devices.

Work performed in collaboration with the experimental groups of J. Kroeger (TU Ilmenau, Germany) and T. Seyller (TU Chemnitz, Germany).
University of Luxembourg: High Performance Computing - ULHPC
Fonds National de la Recherche - FnR
Researchers ; Students
http://hdl.handle.net/10993/22530
FnR ; FNR6010221 > Henrique Miranda > OTPMD > Optical and Transport Properties of MoS2 in the presence of Defects > 01/10/2013 > 30/09/2016 > 2013

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