Reference : Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20763
Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique
English
Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany]
Marso, Michel mailto [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany]
Meyer, R. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany]
Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich, Germany]
1991
Electronics Letters
Institution of Engineering & Technology
27
1991
1759-1760
Yes (verified by ORBilu)
0013-5194
http://hdl.handle.net/10993/20763

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