Reference : GaInAs Camel transistors With Current Gain Above 6 at Room Temperature
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20762
GaInAs Camel transistors With Current Gain Above 6 at Room Temperature
English
Marso, Michel mailto [nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
Zwinge, G. [nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
Grützmacher, D. [nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
Hergeth, J. [nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
Beneking, H. [nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany]
1991
Electronics Letters
Institution of Engineering & Technology
27
1991
335-337
Yes (verified by ORBilu)
0013-5194
http://hdl.handle.net/10993/20762

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