Reference : Quasi-Schottky Diodes on (n)In.53Ga.47As With Barrier Heights of 0.6eV
Scientific congresses, symposiums and conference proceedings : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20761
Quasi-Schottky Diodes on (n)In.53Ga.47As With Barrier Heights of 0.6eV
English
Marso, Michel mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit > ; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
Meyer, R. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
1991
Proceedings of the the MRS Fall Meeting, Symposium E, Boston, MA, USA
449-454
No
MRS Fall Meeting, Symposium E, Boston, MA, USA
1991
http://hdl.handle.net/10993/20761

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