Reference : Enhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20760
Enhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers
English
Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
Marso, Michel mailto [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
1992
Journal of Electrical Engineering = Elektrotechnický Casopis
Slovak Technical University. Faculty of Electrical Engineering and Information Technology
44
1992
367-371
Yes (verified by ORBilu)
1335-3632
0013-578X
Bratislava
Slovakia
http://hdl.handle.net/10993/20760

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