Reference : Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfa...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20757
Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,
English
Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
Marso, Michel mailto [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
Meyer, R. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Germany]
1992
IEEE Transactions on Electron Devices
IEEE
39
1992
1970-1972
Yes (verified by ORBilu)
0018-9383
http://hdl.handle.net/10993/20757

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