Reference : Responsivity Enhancement of InGaAs Based MSM Photodetectors Using 2DEG Layer Sequence...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20715
Responsivity Enhancement of InGaAs Based MSM Photodetectors Using 2DEG Layer Sequence and Semitransparent Electrodes
English
Horstmann, M. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Muttersbach, J. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Schimpf, K. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
1996
Electronics Letters
Institution of Engineering & Technology
32
1613-1614
Yes (verified by ORBilu)
0013-5194
[en] The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with 2um finger-spacing and finger-width exhibit a dark current density less than 10pA/um2, a breakdown voltage of 45V and a saturation capacitance of 30fF. A DC responsivity of 0.61A/W and a –3dB bandwidth of 8.5GHz were achieved. The electric potential distribution is modified by a 2DEG inserted in the layer structure leading, to improved bandwidth.
http://hdl.handle.net/10993/20715

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