Reference : Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs,
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20695
Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs,
English
Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Förster, A. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Darmo, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84239 Bratislava, Slovakia]
Betko, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84239 Bratislava, Slovakia]
Nimtz, G. [II. Institute of Physics, University Köln, D-50937 Köln, Germany]
1997
Applied Physics Letters
American Institute of Physics
71
1118-1120
Yes (verified by ORBilu)
0003-6951
Melville
NY
[en] Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of LT GaAs at low electric fields is rho>108 Ohm cm, much higher than resulting from van der Pauw measurements. It is found that the measured resistivity decreases with increasing the LT GaAs thickness. This is explained by space-charge effect in the vicinity of n+/LT GaAs junction and subsequent suppression of hopping conduction in the high-field junction region.
http://hdl.handle.net/10993/20695

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