Reference : MSM Photodetectors Based on InP/InGaAs 2DEG Structures, in Optoelectronic Properties ...
Books : Book published as author, translator, etc.
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20692
MSM Photodetectors Based on InP/InGaAs 2DEG Structures, in Optoelectronic Properties of Semiconductors and Superlattices
English
Horstmann, M. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
1997
Gordon and Brerach Science Publishers
Optoelectronic Properties of Semiconductors and Superlattices, Vol. 4 Strained-Layer Quantum Wells and Their Applications
http://hdl.handle.net/10993/20692

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