Reference : Optoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelength
Scientific congresses, symposiums and conference proceedings : Paper published in a journal
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20675
Optoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelength
English
Marso, Michel mailto [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Förster, A. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Schimpf, K. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Kordos, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
1997
Proc. 3rd Asia-Pacific Conference on Communications, Sydney, Australia
546-550
No
3rd Asia-Pacific Conference on Communications, Sydney, Australia
2007
http://hdl.handle.net/10993/20675

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