Reference : Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses
Scientific congresses, symposiums and conference proceedings : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20662
Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses
English
Marso, Michel mailto [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Gersdorf, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Hodel, U. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
1998
Proceedings of the 6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO)
105-110
No
0-7803-4333-6
6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO)
2008
http://hdl.handle.net/10993/20662

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