Reference : Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses |
Scientific congresses, symposiums and conference proceedings : Paper published in a book | |||
Engineering, computing & technology : Electrical & electronics engineering | |||
http://hdl.handle.net/10993/20662 | |||
Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses | |
English | |
Marso, Michel ![]() | |
Gersdorf, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany] | |
Fox, A. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany] | |
Hodel, U. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany] | |
Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany] | |
1998 | |
Proceedings of the 6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) | |
105-110 | |
No | |
0-7803-4333-6 | |
6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) | |
2008 | |
http://hdl.handle.net/10993/20662 |
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