Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses

Reference : Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20662

Title :	Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses
Language :	English
Author, co-author :	Marso, Michel [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Gersdorf, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Fox, A. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Hodel, U. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	1998
Main document title :	Proceedings of the 6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO)
Pages :	105-110
Peer reviewed :	No
ISBN :	0-7803-4333-6
Event name :	6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO)
Event date :	2008
Permalink :	http://hdl.handle.net/10993/20662

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