Reference : Conduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critica...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20661
Conduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critical thickness
English
Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Luysberg, M. [Institute of Solid State Research, Research Centre Jülich, D-52425 Jülich, Germany]
1998
Applied Physics Letters
American Institute of Physics
72
1851-1853
Yes (verified by ORBilu)
0003-6951
Melville
NY
[en] Different conduction behavior is observed in nonstoichiometric ~NS! molecular-beam epitaxial GaAs grown at 200 °C below and above the critical thickness. In the low-field Ohmic region only the monocrystalline part of the layer contributes to the room-temperature resistivity, but at higher temperatures the resistivity scales with the total layer thickness. In NS GaAs grown above the critical thickness, a superlinear J –V^n (n=2 – 3) dependence is found at intermediate fields. The prebreakdown voltage is proportional to the total thickness. This indicates that different defects control the electrical properties of the polycrystalline and monocrystalline parts of the NS GaAs. These results can be useful in the design of NS GaAs based devices, which operate at higher temperature and/or higher electric fields.
http://hdl.handle.net/10993/20661

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