Reference : Interference filters from porous silicon with laterally varying wavelength of reflection
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20657
Interference filters from porous silicon with laterally varying wavelength of reflection
English
Hunkel, D. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Butz, R. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Arens-Fischer, R. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Lüth, H. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
1999
Journal of Luminescence
Elsevier Science
80
1999
133-136
Yes (verified by ORBilu)
0022-2313
Amsterdam
The Netherlands
[en] Interference Þlter ; Porous silicon
[en] Porous silicon reflection interference filters of Bragg type consists of up to 40 quarter wave layers with alternating high- and low-refraction index. The refraction index depends on the porosity of the silicon. The reflection wavelength can vary over a wide range and depends on the thickness and refraction index of the porous layers. A laterally continuously varying wavelength with linear profile of the filter can be achieved by manipulating the porosity and thickness of the silicon in the lateral direction. Our approach is to vary the Fermi level laterally by applying a potential parallel to the surface of the wafer. The slope of the Fermi level is easily controlled by the magnitude of the potential. The lateral current density and thus the porosity and thickness is related to the potential difference between the laterally varying Fermi level and the potential induced by the counter electrode. This relation is the well-known current-voltage characteristic of a Silicon hydrofluoric acid contact. The linearity of the etch profile across the wafer is demonstrated and the properties of preliminary reflection filters are shown.
http://hdl.handle.net/10993/20657

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