Reference : Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20654
Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth
English
Moers, J. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Klaes, D. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Tönnesmann, A. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Vescan, L. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Wickenhäuser, S. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Grabolla, T. [Institute for Semiconductor Physics, Walter-Korsing-Str. 2, 15230 Frankfurt (Oder), Germany]
Marso, Michel mailto [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
1999
Solid-State Electronics
Pergamon Press - An Imprint of Elsevier Science
43
1999
529-535
Yes (verified by ORBilu)
0038-1101
[en] A novel vertical MOSFET concept using selective epitaxial growth by low pressure chemical vapor deposition is proposed and the ®rst p-channel device characteristics measured are described. In contrast to other MOS technologies, the gate oxide is deposited before epitaxy, and therefore it exists before the channel region is grown. Compared to planar layouts, the vertical layout increases the packing density without the use of advanced lithography; the extent of the increase depends on application. Compared to other vertical transistors, this concept reduces overlap capacitance and o ers the possibility of three-dimensional integration. Vertical p channel MOSFETs with a channel length LG down to 130 nm and a gate oxide thickness dox down to 12 nm have been fabricated and yield a transconductance of 100 mS mm-1.
http://hdl.handle.net/10993/20654

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