Reference : An InAlAs-InGaAs OPFET with Responsivity Above 200 A/W at 1.3 µm Wavelength
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20653
An InAlAs-InGaAs OPFET with Responsivity Above 200 A/W at 1.3 µm Wavelength
English
Marso, Michel mailto [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Gersdorf, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Fox, A. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Förster, A. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Hodel, U. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Lambertini, R. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
1999
IEEE Photonics Technology Letters
Institute of Electrical and Electronics Engineers
11
117-119
Yes
1041-1135
1941-0174
New York
NY
[en] InAlAs–InGaAs ; MODFET’s ; optical variables measurement ; optoelectronic devices ; photodetectors
[en] The optoelectronic dc and RF behavior of an InAlAs–InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3- um wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-u m gate length and an active area of 50 x 50 u m2 exhibits a responsivity of 235 A/W, at 11- W incident optical power. The photoconductive response is higher than for an metal–semiconductor–metal photodetector with the same InGaAs absorption layer thickness up to 10 GHz.
http://hdl.handle.net/10993/20653

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