Reference : Electrical Control of the Reflectance of Porous Silicon Layers
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20649
Electrical Control of the Reflectance of Porous Silicon Layers
English
Thönissen, M. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Marso, Michel mailto [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Arens-Fischer, R. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Hunkel, D. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Krüger, M. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Ganse, V. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Theiss, W. [I. Physikalisches Institut der RWTH Aachen, Germany]
2000
Journal of Porous Materials
Springer
7
(1/2/3),
205-208
Yes (verified by ORBilu)
1380-2224
1573-4854
Boston
MA
[en] porous silicon ; oxidation ; liquid crystal
[en] In this paper we demonstrate the filling of porous silicon (PS) layers with liquid crystals (LC’s) in order to control the reflectance electrically. The preparation of PS and the choice of the right group of LC’s will be presented. Especially an oxidation of PS is necessary so that the methods and parameters of oxidation will also be discussed. As a first result the increasing and decreasing of the thickness oscillations in the reflectance as a function of the applied voltage can be observed.
http://hdl.handle.net/10993/20649

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