Reference : Material and Device Issues of GaN-based HEMTs
Scientific congresses, symposiums and conference proceedings : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20648
Material and Device Issues of GaN-based HEMTs
English
Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
Alam, A. [AIXTRON AG, D-52072 Aachen, Germany]
Betko, J. [> >]
Chow, P. P. [> >]
Heuken, M. [AIXTRON AG, D-52072 Aachen, Germany]
Javorka, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
Kočan, M. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
Marso, Michel mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
Morvic, M. [> >]
van Hove, J. M. [> >]
2000
Proceedings of the 8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO),
61-66
No
8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO),
2000
http://hdl.handle.net/10993/20648

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