Reference : Formation of Porous Silicon Filter Structures with Different Properties on Small Areas
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20647
Formation of Porous Silicon Filter Structures with Different Properties on Small Areas
English
Arens-Fischer, R. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
Krüger, M. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
Thönissen, M. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
Ganse, V. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
Hunkel, D. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
Marso, Michel mailto [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
2000
Journal of Porous Materials
Springer
7 (1/2/3)
223-226
Yes (verified by ORBilu)
1380-2224
1573-4854
Boston
MA
[en] porous silicon ; patterning ; photolythography ; dielectric filters ; reactive ion etching (RIE) ; microoptics
[en] Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and the time respectively. For micro-optical devices you need patterned PS. For some optical devices it is not sufficient to have only one filter but it is necessary to form filters with different properties on a small area. We applied a method (M. Frank, U.B. Schallenberg, N. Kaiser, and W. Buß, in Conference on Miniaturized Systems with Microoptics and Micromechanics, edited by M.E. Moamedi, L.J. Hornbeck, and K.S.J. Pister (SPIE, San Jose, 1997), SPIE Proceedings Series 3008, p. 265) to PS which fits this goal by the following steps: fabrication of the desired reflectors below each other and partial removal of upper reflectors with reactive ion etching (RIE). The technological aspects of patterning PS after the fabrication are an important topic of this work. Problems are discussed in detail and solutions are given.
http://hdl.handle.net/10993/20647

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