Reference : AlGaN/GaN HEMT Optimization Using the RoundHEMT Technology
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20635
AlGaN/GaN HEMT Optimization Using the RoundHEMT Technology
English
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Alam, A. [AIXTRON AG, Kackertstr. 15–17, D-52072 Aachen, Germany]
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Hardtdegen, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Heuken, M. [AIXTRON AG, Kackertstr. 15–17, D-52072 Aachen, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2001
Physica Status Solidi A. Applied Research
Wiley-VCH
188
199-202
Yes (verified by ORBilu)
0031-8965
1521-396X
Berlin
Germany
[en] The electrical characterization of epitaxially grown HEMT layer systems for device fabrication is commonly performed by Hall measurements. However, the ultimate characterization of a HEMT layer system is the transistor device itself. The RoundHEMT concept meets the need for a device technology with few fabrication steps that allows a fast feedback to epitaxy while providing an evaluation of important electrical and also processing data. Even though nearly identical Hall data on structures with different thickness and doping concentration of the AlGaN layers suggest similar device properties, the RoundHEMTs resolve remarkable differences in device performance. The best layer structure was used to fabricate HEMTs with IDS = 700 mA/mm, fT = 35 GHz, and fmax = 70 GHz for LG = 0.2 mm.
http://hdl.handle.net/10993/20635

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