Reference : Varactor Diodes based on an AlGaN/GaN HEMT layer structure
Scientific congresses, symposiums and conference proceedings : Paper published in a journal
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20634
Varactor Diodes based on an AlGaN/GaN HEMT layer structure
English
Marso, Michel mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit > ; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Bernát, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2001
EProc. EDMO
No
EDMO
2001
http://hdl.handle.net/10993/20634

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