Reference : Vertical Double-Gate MOSFET Based on Epitaxial Growth
Scientific congresses, symposiums and conference proceedings : Paper published in a journal
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20633
Vertical Double-Gate MOSFET Based on Epitaxial Growth
English
Moers, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Trellenkamp, St [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Vescan, L. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2001
Proceedings of the 31st European Solid State Devices Research Conference, Nürnberg, Germany
191-194
No
31st European Solid State Devices Research Conference, Nürnberg, Germany
2001
http://hdl.handle.net/10993/20633

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