Reference : Annealing of Schottky contacts deposited on dry etched AlGaN/GaN,
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20628
Annealing of Schottky contacts deposited on dry etched AlGaN/GaN,
English
Kuzmík, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravska cesta 9, 842 39 Bratislava, Slovak Republic]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Juelich, D-52425 Juelich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Juelich, D-52425 Juelich, Germany]
Kordoš [Institute of Thin Films and Interfaces, Research Centre Juelich, D-52425 Juelich, Germany]
2002
Semiconductor Science & Technology
Institute of Physics
17
(2002).
L76-L78
Yes (verified by ORBilu)
0268-1242
Bristol
United Kingdom
[en] The influence of annealing on properties of Pt Schottky contacts deposited on the electron cyclotron resonance plasma etched surface of an AlGaN/GaN heterostructure has been investigated. It is found that rapid thermal annealing (450 ◦C and 40 s in nitrogen gas), performed after metal deposition, allows for the preparation of Schottky contacts with similar or better properties than those obtained on a non-etched surface. This procedure is suitable for the realization of recessed high-quality Schottky contacts of AlGaN/GaN HEMTs.
http://hdl.handle.net/10993/20628

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