Reference : AlGaN/GaN HEMTs on Silicon Substrates with f¬T of 32/20 GHz and fmax of 27/22 GHz for...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20627
AlGaN/GaN HEMTs on Silicon Substrates with f¬T of 32/20 GHz and fmax of 27/22 GHz for 0.5/0.7 µm gate length,
English
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Alam, A. [AIXTRON AG, D-52072 Aachen, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Heuken, M. [AIXTRON AG, D-52072 Aachen, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2002
Electronics Letters
Institution of Engineering & Technology
38
2002
288-289
Yes (verified by ORBilu)
0013-5194
[en] AlGaN/GaN HEMTs on silicon substrates have been realised and their static and small signal characteristics investigated. The AlGaN/GaN (x=0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current density of 0.53 to 0.68 A/mm and a peak extrinsic transconductance of 110 mS/mm. A unity gain frequency of 20 and 32 GHz and a maximum frequency of oscillation of 22 and 27 GHz are obtained for devices with a gate length of 0.7 and 0.5 mm, respectively. These values are the highest reported so far on AlGaN=GaN=Si HEMTs and are comparable to those known for devices using sapphire and SiC substrates.
http://hdl.handle.net/10993/20627
10.1049/el:20020203

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