Reference : Growth and characterisation of AlGaN/GaN-HEMTs on silicon substrates,
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20626
Growth and characterisation of AlGaN/GaN-HEMTs on silicon substrates,
English
Kalisch, H. [Institut für Theoretische Elektrotechnik, RWTH Aachen, Kopernikusstr. 16, 52074 Aachen, Germany]
Dikme, Y. [Institut für Theoretische Elektrotechnik, RWTH Aachen, Kopernikusstr. 16, 52074 Aachen, Germany]
Gerstenbrandt, G. [AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany]
Alam, A. [AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany]
Szymakowski, A. [Institut für Theoretische Elektrotechnik, RWTH Aachen, Kopernikusstr. 16, 52074 Aachen, Germany]
Klockenhoff, H. [Institut für Theoretische Elektrotechnik, RWTH Aachen, Kopernikusstr. 16, 52074 Aachen, Germany]
Rieckmann, C. [Institut für Theoretische Elektrotechnik, RWTH Aachen, Kopernikusstr. 16, 52074 Aachen, Germany]
Heuken, M. [AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany, Institut fu¨ r Halbleitertechnik, RWTH Aachen, Templergraben 55, 52056 Aachen, Germany]
H.Jansen, R. [Institut für Theoretische Elektrotechnik, RWTH Aachen, Kopernikusstr. 16, 52074 Aachen, Germany]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2002
Physica Status Solidi A. Applications and Materials Science
Wiley-VCH Verlag
194
2
464-467
Yes (verified by ORBilu)
1862-6300
1862-6319
Weinheim
Germany
[en] In order to analyse and to compare the properties of AlGaN/GaN HEMT on silicon and on sapphire substrates, studies on both layers and device types have been performed. Besides the substantially lower substrate costs compared to SiC, the use of silicon as substrate provides the advantage of a higher thermal conductivity compared to sapphire allowing a more efficient heat removal from the device and thus higher RF power densities. On silicon, up to 900 nm of GaN as well as HEMT structures have been deposited and characterised regarding their structural, optical and electrical properties. HEMT devices with various gate lengths were processed and measured onwafer under continuous and pulsed operation conditions. The properties of the layers and devices on silicon substrates are developing to become comparable to those based on sapphire and silicon carbide.
http://hdl.handle.net/10993/20626

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