Reference : AlGaN/GaN HEMTs on (111) Silicon Substrates
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20625
AlGaN/GaN HEMTs on (111) Silicon Substrates
English
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Alam, A. [AIXTRON AG, D-52072 Aachen, Germany]
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Heuken, M. [AIXTRON AG, D-52072 Aachen, Germany]
Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2002
IEEE Electron Device Letters
IEEE
23
2002
4-6
Yes (verified by ORBilu)
0741-3106
Piscataway
NJ
[en] GaN ; MODFETs ; semiconductor device fabrication ; silicon
[en] AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and fmax/fT=0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling 16 W/mm static heat dissipation.
http://hdl.handle.net/10993/20625

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