Reference : Thin low-temperature gate oxides for vertical field-effect transistor, ,
Scientific congresses, symposiums and conference proceedings : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20621
Thin low-temperature gate oxides for vertical field-effect transistor, ,
English
Goryll, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Moers, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Trellenkamp, St [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Vescan, L. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2002
Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
275-277
No
0-7803-7276-X
4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
2002
http://hdl.handle.net/10993/20621

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