Reference : Investigation of current collapse in doped and undoped AlGaN/GaN HEMTs
Scientific congresses, symposiums and conference proceedings : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20619
Investigation of current collapse in doped and undoped AlGaN/GaN HEMTs
English
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Carius, R. [Institute of Photovoltaics, Research Centre Jülich, D-52425 Jülich, Germany]
Heuken, H. [AIXTRON AG, D-52072 Aachen, Germany]
Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2002
Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
299-302 (2002)
No
0-7803-7276-X
4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
2002
http://hdl.handle.net/10993/20619

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