Reference : Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates
Scientific congresses, symposiums and conference proceedings : Paper published in a journal
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20616
Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates
English
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Alam, A. [Aixtron AG, D-52072 Aachen, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Heuken, M. [Aixtron AG, D-52072 Aachen, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2002
Mat. Res. Soc. Symp. Proc. Vol. 743
743, L9.1.1
No
MRS Fall Meeting
2002
[en] Results on the preparation and properties of AlGaN/GaN HEMTs on silicon substrates are presented and selected issues related to the material structure and device performance devices are discussed. Virtually crack-free AlGaN/GaN heterostructures (xAlN ≅ 0.25), with low surface roughness (rms of 0.64 nm), ns ≅ 1×1013 cm-2 and μ ≅ 1100 cm2/V s at 300 K, were grown by LP-MOVPE on 2-inch (111)Si substrates. HEMT devices with Lg = 0.3−0.7 μm were prepared by conventional device processing steps. Photoionization spectroscopy measurements have shown that a trap level of 1.85 eV, additional to two levels of 2.9 and 3.2 eV found before on GaN-based HEMTs on sapphire, is present in the structures investigated. Self-heating effects were studied by means of temperature dependent dc measurements. The channel temperature of a HEMT on Si increases with dissipated power much slower than for similar devices on sapphire substrate (e.g. reaches 95 and 320 °C on Si and sapphire, respectively, for 6 W/mm power). Prepared AlGaN/GaN/Si HEMTs exhibit saturation currents up to 0.91 A/mm, a good pinch-off, peak extrinsic transconductances up to 150 mS/mm and static heat dissipation capability up to ~16 W/mm. Unity current gain frequencies fT up to 21 and 32 GHz were obtained on devices with gate length of 0.7 and 0.5 μm, respectively. The saturation current and fT values are comparable to those known for similar devices using sapphire and SiC substrates. Properties of AlGaN/GaN/Si HEMTs investigated show that this technology brings a prospect for commercial application of high power rf devices.
http://hdl.handle.net/10993/20616

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