Reference : Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20615
Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method
English
Kuzmík, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Alam, A. [Aixtron AG, D-52072 Aachen, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Heuken, M. [Aixtron AG, D-52072 Aachen, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2002
IEEE Transactions on Electron Devices
IEEE
49
8
1496-1498
Yes (verified by ORBilu)
0018-9383
[en] III-nitrides ; power FETs ; semiconductor device measurements ; semiconductor device thermal factors
[en] Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor dc characterization methods. A negative differential output resistance is observed for high dissipated power levels. An analytical formula for a source-drain current drop as a function of parasitic source resistance and threshold voltage changes is proposed to explain this behavior. The transistor source resistance and threshold voltage is determined experimentally at different elevated temperatures to construct channel temperature versus dissipated power transfer characteristic. It is found that the HEMT channel temperature increases rapidly with dissipated power and at 6 W/mm reaches values of 320 C for sapphire and 95 C for silicon substrate, respectively.
http://hdl.handle.net/10993/20615

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