Reference : Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20612
Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs
English
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Carius, R. [Institute of Photovoltaics, Research Centre Jülich, D-52425 Jülich, Germany]
Alam, A. [AIXTRON AG, Kackertstrasse 15–17, 52072 Aachen, Germany]
Heuken, M. [AIXTRON AG, Kackertstrasse 15–17, 52072 Aachen, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2002
Physica Status Solidi C. Current Topics in Solid State Physics
Wiley-VCH Verlag
1
82-85
Yes (verified by ORBilu)
1862-6351
1610-1634
Weinheim
Germany
[en] Deep-level defects and surface states are supposed to be responsible for the limitation of AlGaN/GaN high electron mobility transistor (HEMT) performance. In order to investigate the influence of these traps, photoionization spectroscopy was used to study doped and undoped HEMTs grown on sapphire in different metalorganic vapour-phase epitaxy reactors. This measurement technique is based on the optical reversion of the current collapse and it allows one to determine photoionization cross-sections of the participating traps. For doped and undoped HEMTs nearly the same two defect levels with excitation energies of 3.2 eV and 2.9 eV were determined. By varying the source–gate voltage it was found that the photoionization cross-section is reduced for positive gate bias, i.e. the virtual gate on the gate–drain access region is partially neutralized due to the removal of trapped electrons from surface states.
http://hdl.handle.net/10993/20612

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