Reference : Photoionization spectroscopy of traps in AlGaN/GaN HEMTs
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20611
Photoionization spectroscopy of traps in AlGaN/GaN HEMTs
English
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Carius, R. [Institute of Photovoltaics, Research Centre Jülich, D-52425 Jülich, Germany]
Alam, A. [AIXTRON AG, D-52072 Aachen, Germany]
Heuken, H. [AIXTRON AG, D-52072 Aachen, Germany]
Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2002
Journal of Electronic Materials
Springer Science & Business Media B.V.
31
12
1321-1324
Yes (verified by ORBilu)
0361-5235
[en] photo-ionization spectroscopy
http://hdl.handle.net/10993/20611

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