Reference : Influence of Surface Treatments on DC-Performance of GaN-Based HFETs
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20595
Influence of Surface Treatments on DC-Performance of GaN-Based HFETs
English
Mistele, D. [Laboratory for Information Technology, University of Hannover, Schneiderberg 32, 30167 Hannover, Germany]
Rotter, T. [Laboratory for Information Technology, University of Hannover, Schneiderberg 32, 30167 Hannover, Germany]
Bougrioua, Z. [CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France]
Marso, Michel mailto [Semiconductor Thin Film and Devices, Research Centre Ju¨ lich, 52425 Ju¨ lich, Germany]
Roll, H. [4. Physikalisches Institut, Universta¨ t Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany]
Klausing, H. [Laboratory for Information Technology, University of Hannover, Schneiderberg 32, 30167 Hannover, Germany]
Fedler, F. [Laboratory for Information Technology, University of Hannover, Schneiderberg 32, 30167 Hannover, Germany]
Semchinova, O. K. [Laboratory for Information Technology, University of Hannover, Schneiderberg 32, 30167 Hannover, Germany]
Aderhold, J. [Laboratory for Information Technology, University of Hannover, Schneiderberg 32, 30167 Hannover, Germany]
Moermann, I. [INTEC Ghent University – IMEC, St. Pietersnieuwstraat 41, 9000 Ghent, Belgium]
Graul, J. [Laboratory for Information Technology, University of Hannover, Schneiderberg 32, 30167 Hannover, Germany]
2002
Physica Status Solidi A. Applications and Materials Science
Wiley-VCH Verlag
194
2
452-455
Yes (verified by ORBilu)
1862-6300
1862-6319
Weinheim
Germany
[en] This work reports on the influence of the surface and the gate length on the performance of AlGaN/GaN based Hetero Field Effect Transistors (HFETs). Differently NH4Sx treated surfaces result in variation of the drain current IDmax of more then 100%. Gate recessing by photoelectrochemical treatment changes the threshold voltage Vth but affects the drain current little. Next, the reduction of the gate length increases the IDmax further by more than 60%. The IDmax values for the transistors are 350 mA mm––1 for the NH4Sx-treated, 850 mA for the untreated, and 1.43 A mm––1 for the one with a 0.2 mm gate length. The corresponding transconductances gm are 66, 150, and 280 mS mm––1, respectively. Surface analysis with Auger Electron Spectroscopy (AES) and contact characterization (TLM) reveals, that the NH4Sx treatment removes the native oxide and increases the contact resistance as well. Therefore we attribute the increase of IDmax and gm mainly to a beneficial behavior of gallium-oxide at the surface on the sheet carrier density nS of the 2DEG at the heterointerface.
http://hdl.handle.net/10993/20595

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