Reference : Peculiarities of low frequency noise in GaN-based high electron mobility transistors
Scientific congresses, symposiums and conference proceedings : Paper published in a journal
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20589
Peculiarities of low frequency noise in GaN-based high electron mobility transistors
English
Vitusevich, S. A. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Petrychuk, M. V. [> >]
Klein, N. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Danylyuk, S. V. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Belyaev, A. E. [> >]
2003
Proc. 17th Internat. Conf. Noise and Fluctuations ICNF
789-793
No
17th Internat. Conf. Noise and Fluctuations ICNF
2003
http://hdl.handle.net/10993/20589

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