Reference : Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20587
Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates
English
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
Alam, A. [Aixtron AG, D-52072 Aachen, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
Kuzmík, J. [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
Heuken, M. [Aixtron AG, D-52072 Aachen, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
2003
Microelectronics Journal
Elsevier Science
34
435-437
Yes (verified by ORBilu)
0026-2692
[en] GaN-based HEMTs; ; Si substrates ; I –V characteristics
[en] Selected material and device issues related to the performance of AlGaN/GaN HEMTs on (111) Si substrates are reported. It is shown that these devices can sustain significantly higher dc power (16 W/mm) than those grown on sapphire. Consequently smaller degradation in the device performance at higher temperatures (up to 400 8C) is demonstrated. Photoionisation spectroscopy reveals trap level of 1.85 eV, additional to two another levels found before in GaN-based HEMTs prepared on sapphire. Thus, AlGaN/GaN HEMTs on Si substrates demonstrate the viability of this technology for commercial application of high power rf devices.
http://hdl.handle.net/10993/20587
10.1016/S0026-2692(03)00067-3

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